Regulacje i polityka gospodarcza · 24/10/2011

Notice of intent to grant exclusive license

This notice is issued in accordance with 35 U.S.C. 209(e) and 37 CFR 404.7(a)(1)(i). NASA hereby gives notice of its intent to grant an exclusive license in the United States to practice the inventions described and claimed in U.S. Patent No. 7,341,883 B2 entitled "Silicon Germanium Semiconductive Alloy and Method of Fabricating Same," U.S. Patent No. 7,514,726 B2 entitled "Graded Index Silicon Germanium on Lattice Matched Silicon Germanium Semiconductive Alloy," U.S. Patent No. 7,558,371 B2 entitled "Method of Generating X-Ray Diffraction Data for Integral Detection of Twin Defects in Super- Hetero-Epitaxial Materials," U.S. Patent No. 7,906,358 B2 entitled "Epitaxial Growth of Cubic Crystalline Semiconductor Alloys on Basal Plane of Trigonal or Hexagonal Crystal," U.S. Patent Application No. 12/254,134 entitled "Hybrid Bandgap Engineering for Super-Hetero- Epitaxial Semiconductor Materials, and Products Thereof," U.S. Patent Application No. 12/288,379 entitled "Rhombohedral Cubic Semiconductor Materials on Trigonal Substrate with Single Crystal Properties and Devices Based on Such Materials," U.S. Patent No. 7,769,135 B2 entitled "X-ray Diffraction Wafer Mapping Method for Rhombo